Associate Professor, Ph.D.

Room 3-205，

Key Laboratory of Radiation Physics and Technology of Education Ministry of China,

Institute of Nuclear Science and Technology,

Sichuan University, Chengdu 610065, China

Email: zhanchangyong@scu.edu.cn

Tel: +86-28-85412230

Education and Employment：

2005-2010, Sichuan University, Ph. D. candidate

2008-2009, City University of Hong Kong, Research Assistant

2013-2014, Université Paris-Sud, Visiting Scholar

2010-now, Sichuan University, Associate Professor

Interests

Surface and interface modifications of materials

Formation of coatings and nanostructure by electrochemical etch and physical sputtering and deposition

Materials for detections and sensors

Detective and sensitive properties of porous and nano material

Ion beam technology and physical vapor deposition technologies

Applications of cathodic arc deposition, magnetron sputering deposition, and ion beam technologies

代表性论文和成果 （Selected Publications and Achievements）：

1. C Y Zhan, Y Zou, W Jiang, X Q Fan, Yong Jiang, Q J Feng, X L Li, H Sun, J C Wu, Study of electrical current reconstruction on macropore arrays etched electrochemically on lightly-doped n-Si, Appl. Surf. Sci. 2016, 362: 538–544..

2. C Y Zhan, Y Zou, J C Wu, D Ren, B Liu, K F Huo, N K Huang, P K Chu，Self-sealing SiO2 pores on silicon formed by oxidation of microporous silicon，Microporous and Mesoporous Materials 174 (2013) 10–13

3. CY Zhan, Y Zou, J C Wu, P K Chu, Fabrication of Porous Silicon Nanotips by Using Argon Ion-beam Irradiation, Journal of the Korean Physical Society, 2013, 63(2), 206-208.

4. XQ Fan, Y Jiang, CY Zhan*, Y Zou, J C Wu, N K Huang, Effect of electrochemical etching current on prepared perforated silicon structures for neutron detectors, Front. Mater. Sci., 2013, 7(1): 96-101

5. CY Zhan, PK Chu, D Ren, YC Xin, KF Huo, Y Zou, NK Huang, Release of hydrogen during transformation from porous silicon to silicon oxide at normal temperature, Int. J. Hydrogen Energ., 2011, 36: 4513-4517.

6. CY Zhan, LW Wang, HY Dai, NK Huang, JQ Wang, Design and transmittance measurement of the Ge1-xCx antireflection coatings, J. Korea Phys. Soc., 2008, 52: S13-S16.

7. CY Zhan, LW Wang, NK Huang, Analysis of the Ge_1-xC_x films deposited by MFMST, Appl. Surf. Sci., 2007, 253: 7478-7482.

8. CY Zhan, LW Wang, NK Huang, Effect of bias on content of GeC in Ge_1-xC_x films, Chin. Phys. Lett., 2007, 24(3): 803-806.

授权专利（Licensed Patent）

1. 展长勇，任丁，邹宇，刘波，林黎蔚，黄宁康，一种新型多孔硅及其制备方法，专利号 (Patent No.) ZL 201110344679.2

2. 展长勇，邹宇，任丁，伍建春，刘波，一种微型氚电池及其制备方法，专利号 (Patent No.) ZL 201210230553.7