Ph. D.

Associate Professor

Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, People’s Republic of China;

Tel: (86) 13980921587

Email: liubo2009@scu.edu.cn

Education:

2001-2004 M. S. in Material Science, June 2008, Xi'an University of Architecture and Technology, Xi'an, P.R. China

2004-2008 Ph. D. in Material Science, June 2008, Xi'an Jiaotong University, Xi'an, P.R. China. (Advisor: Prof. Ke-Wei Xu)

Research Experience

2004-2008 Research assistant in Xu’s Group (nano-materials)

2009-2012 Lecture in Institute of Nuclear Science and Technology, Sichuan University

2012-    Associate Professor in Institute of Nuclear Science and Technology, Sichuan University

Current Research Interests

1) Preparation of nano-porous ultra-low dielectric constant (k) materials such as p-SiOC:H or p-SiC:H for Cu interconnect of advanced semiconductor devices by using PECVD, MOCVD technology and its properties under electrical, mechanical fields and thermal fields.

2) Microstructure and mechanical properties of nano-composite thin films such as Zr-Si-N、Zr-Ge-N、Ti-Si-C-N and so on that were produced by arc enhanced magnetron sputtering (AEMS) or physical vapor deposition (PVD)

3) The microstructure and properties evolution of nano-materials under extreme physical environment (nuclear radiation environment or space environment and so on)

4) Stress/strain effect on the functional properties of nano-materials; Surface and interface induced phase transformation of nano-materials

5) In-situ TEM investigation of deformation and fracture behaviors in W-Cu or W-Re alloy after high energy ion irradiation

Selected Publications and Achievements:

[1] Jianxiong Zou, Bo Liu*, Guohua Jiao*, Yuanfu Lu, Yuming Dong, and Qiran Li, The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization, Journal of Applied Physics, 2016, (120): 095305:1-7.

[2]Guohua Jiao, Bo Liu*, Qiran Li, Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration, Applied Physics A-Materials Science & Processing, 2015, (120):579–585.

[3] Shunli Chen, Bo Liu*, Liwei Lin*, Guohua Jiao, Microstructural development and helium bubble formation in Cu/W(Re) nanometer multilayer films irradiated byHe+ ion, Nuclear Instruments and Methods in Physics Research B, 2015, (354): 244–248.

[4]B. Liu, K.W. Xu, Improvement of Thermal Stability and Electrical Property of Cu/Cu(Zr)/SiOC:H Film Stack by Controlling the Structure and Composition of Zr(Ge) Nano-interlayer, Microelectronic Engineering, 2014, (118):41-46.

[5] B. Liu, L.W. Lin, D. Ren, et al., Cu(Ge) alloy films with zirconium addition on barrierless Si for excellent property improvements, Journal of Physics D:Applied Physics, 2013, (46): 155305:1-6.

[6] L.W. Lin, B. Liu*, D. Ren*, G.H. Jiao, K.W. Xu, Effect of sputtering bias voltage on the structure and properties of Zr-Ge-N diffusion  barrier films, Surface & Coatings Technology, 2013, (228):S237-S240. 

[7] B. Liu, J. J. Yang, C. H. Liu, et al., Ultrathin CuSiN/p-SiC:H bilayer capping barrier for Cu/ultralow-kdielectric integration, Applied Physics Letters, 2009 , 94(15): 153116.

[8] J. J. Yang, B. Liu*, et al., Homologous temperature dependence of global surface scaling behaviors of polycrystalline copper films, Applied Physics Letters, 2009, 95(19): 194104.

[9] B. Liu, Z. X. Song, K. W. Xu, An ultra-thin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration, Applied Physics Letters, 2008, (93):174108 (1-3).

[10] B. Liu, K. W. Xu, Z. X. Song, Multilayered metal capping barrier including CuSiN, for sub-65-nm technology nodes, Journal of Applied Physics,2007, (102): 076108 (1-3).